總結
對硅片的光刻實驗已經成功驗證了可分離式模型在不同掃描型光刻機-光刻膠工藝類型中的應用。計算光刻的可分離式模型能夠大幅度地加快產品投入生產的速度。如果現有的光刻膠工藝能夠用于新型的掃描式光刻成像條件,這一可靠的模型(適用于任何掃描式光刻設備配置)只需要幾分鐘,而不是以往需要幾周的時間就能執行。在曝光設備安裝之前,該模型就能使用在設備廠測量的精確設備參數,愈早能建立精確的模型,就能夠同時、平行地來確定設計規則、RET策略、OPC開發等。你還可以發現有更多的選件以及能獲得最佳化的解決方案。
參考文獻
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