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Enhancement Mode MOSFETFeatures
• Low rDS(on)
• Ultra Low Gate Charge
• High dV/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems |
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發(fā)表于 2012-5-25 10:53:08
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