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【獵頭職位：上海需要一位“power discrete sr designer”】職位關鍵詞：IGBT，power mos，Device，simulation 聯系人：Raymond Chen，MSN:[email protected], Skype:shmily831126, Email: [email protected]。微信也可查詢職位啦！打開手機微信，搜號碼“KTHR_COM”或查找微信公眾帳號“KT人才”或掃描以上二維碼即可添加，歡迎大家關注！ Job Description 1. To develop and optimize device architectures of state of the art power semiconductors; 2. Optimize static and dynamic device performance; 3. Co-work with FAB process experts to create prototypes; Job Requirement 1. Master or PhD degree in Electrical engineering, Semiconductor Physics Microelectronics; 2. Or similar with at least 4 years experience in discrete power semiconductor device development; 3. Using state of the art simulation software, preferably Synopsis TCAD (Sentaurus) process and device simulators; 4. Solid knowledge of state-of-the art IGBT and Superjunction devices architecture is required; 5. Experienced in device layouting (Cadence); 6. 3D simulation and packaging know-how is of advantage but not mandatory; 7. Mandarin and good command in English; 8. Highly innovative and self-motivated individuals; |
